Preparation of 4.8% efficiency Cu2ZnSnSe4 based solar cell by a two step process

Author

Fairbrother, A. ; Saucedo, E. ; Fontané, X. ; Izquierdo-Roca, V. ; Sylla, D. ; Espindola-Rodriguez, M. ; Pulgarín-Agudelo, F.A. ; Vigil-Galán, O. ; Pérez-Rodríguez, A.

Author_Institution

IREC, Catalonia Inst. for Energy Res., Barcelona, Spain

fYear

2012

fDate

3-8 June 2012

Abstract

Zn-rich Cu₂ZnSnSe₄ (CZTSe) films were prepared by a two step process. We have varied the Zn/Sn ratio from 1.24 to 1.73 and analyzed the effects of precursor composition and annealing temperature (between 425° C and 550° C) on the morphological, structural, and optoelectronic properties of the films. Raman scattering measurements show the presence of ZnSe as the main secondary phase in the films, as well as SnSe at the back region of the films processed with lower Zn-excess values and annealed at lower temperatures. The effect of the different secondary phases on the optoelectronic properties is discussed. In a first optimization we obtain as a preliminary result a 4.8% efficiency solar cell.

Keywords

Raman spectra; annealing; copper compounds; optimisation; optoelectronic devices; solar cells; thin film devices; tin compounds; zinc compounds; Cu₂ZnSnSe₄; Raman scattering measurement; annealing temperature; efficiency 4.8 percent; main secondary phase; optoelectronic properties; precursor composition; secondary phase; solar cell; temperature 425 degC to 550 degC; two step process; Annealing; Films; Raman scattering; Temperature measurement; Tin; Zinc; Cu2ZnSnSe4; Raman spectroscopy; SnSe; ZnSe; composition; kesterite; secondary phases;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Conference_Location

Austin, TX

ISSN

0160-8371

Print_ISBN

978-1-4673-0064-3

Type

conf

DOI

10.1109/PVSC.2012.6318146

Filename

6318146