Degradation behavior of flexible a-Si/a-SiGe/a-SiGe triple junction solar cells irradiated with 20-350 keV protons

Author

Sato, Shin-ichiro ; Beernink, Kevin ; Ohshima, Takeshi

Author_Institution

Japan Atomic Energy Agency (JAEA), Takasaki, Japan

fYear

2012

fDate

3-8 June 2012

Abstract

Electrical performance degradation of a-Si/a-SiGe/a-SiGe triple-junction solar cells due to irradiation of protons with different energies and their performance recovery at room temperature just after irradiation are reported. The current-voltage characteristics are measured in-situ and the results show that all the parameters recover with time after proton irradiation is stopped. In particular, the short-circuit current remarkably recovers. It is also shown that the degradation is scaled by a unit of displacement damage dose independent of proton energy. This indicates that the proton-induced degradation is mainly caused by the displacement damage effect.

Keywords

Ge-Si alloys; amorphous semiconductors; elemental semiconductors; protons; radiation effects; semiconductor junctions; silicon; solar cells; Si-SiGe; current-voltage characteristics; displacement damage dose; displacement damage effect; electrical performance degradation behavour; electron volt energy 20 keV to 350 keV; flexible triple junction solar cell; proton energy; proton irradiation; proton-induced degradation; radiation effects; short-circuit current; temperature 293 K to 298 K; Annealing; Degradation; Indium tin oxide; Protons; Radio frequency; Silicon germanium; Substrates; amorphous semiconductors; ion radiation effects; photovoltaic cells; proton effects; radiation hardening;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Conference_Location

Austin, TX

ISSN

0160-8371

Print_ISBN

978-1-4673-0064-3

Type

conf

DOI

10.1109/PVSC.2012.6318185

Filename

6318185