Low threshold current density, high power, high efficiency 670 nm GaInP/AlGaInP SQW laser diode

Author

Wu, Linzhang ; Gao, Feng ; Fu, Liwei ; Winterhoff, R. ; Scholz, Ferdinand ; Zhang, Yanshen

Author_Institution

Dept. of Precision Instrum., Tsinghua Univ., Beijing, China

Volume

2

fYear

1999

fDate

18-22 Oct. 1999

Firstpage

1416

Abstract

Presents a high power (3.6 W from 64 /spl mu/m wide gain guided while 88.0 mW from 2 /spl mu/m wide ridge waveguide devices), high efficiency (95.5%) GaInP/AlGaInP SQW laser diode, which emits at 670 nm and has an ultra low threshold current density (238 A/cm/sup 2/) and very high characteristic temperature (150 K).

Keywords

Debye temperature; III-V semiconductors; MOCVD; aluminium compounds; current density; gallium compounds; indium compounds; laser beams; laser variables measurement; optical fabrication; quantum well lasers; ridge waveguides; vapour phase epitaxial growth; waveguide lasers; 150 K; 2 mum; 3.6 W; 64 mum; 670 nm; 88 mW; 95.5 percent; GaInP-AlGaInP; GaInP/AlGaInP laser; characteristic temperature; high efficiency laser diode; high power laser diode; low threshold current density laser diode; ridge waveguide devices; single quantum well laser diode; ultra low threshold current density; Diode lasers; Fiber lasers; Optical pulses; Optical recording; Optical scattering; Power lasers; Quantum well lasers; Stimulated emission; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference

Conference_Location

Beijing, China

Print_ISBN

7-5635-0402-8

Type

conf

DOI

10.1109/APCC.1999.820538

Filename

820538