• DocumentCode
    3525471
  • Title

    Light-Induced degradation in compensated mc-Si p-type solar cells

  • Author

    Bernardini, Simone ; Saynova, Desislava ; Binetti, Simona ; Coletti, Gianluca

  • Author_Institution
    ECN Solar Energy, Petten, Netherlands
  • fYear
    2012
  • fDate
    3-8 June 2012
  • Abstract
    Light-induced degradation (LID) due to boron-oxygen complex formation seriously diminishes the efficiency of p-type solar cells. The influence of dopants concentration, net doping and oxygen on the degradation process is investigated using a large variety of B and P compensated mc-Si ingots. Our experiments indicate that the trend of LID depends on the amounts of interstitial oxygen [Oi] and total boron [B]. No clear dependence was found on the net doping.
  • Keywords
    boron; semiconductor doping; silicon; solar cells; B; Si; boron-oxygen complex formation; compensated mc-Si p-type solar cells; dopants concentration; interstitial oxygen; light-induced degradation; net doping; Boron; Degradation; Doping; Market research; Materials; Photovoltaic cells; Temperature measurement; boron; degradation; doping; oxygen; photovoltaic cells; silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4673-0064-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2012.6318268
  • Filename
    6318268
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3525471