Punch-through effect and collapse of the electric field in silicon strip detectors

Author

Betancourt, C. ; Wright, J. ; Bielecki, A. ; Butko, Z. ; Parker, C. ; Ptak, N. ; Fadeyev, V. ; Sadrozinski, H.F.-W.

Author_Institution

Santa Cruz Inst. for Particle Phys., Univ. of California, Santa Cruz, CA, USA

fYear

2010

fDate

Oct. 30 2010-Nov. 6 2010

Firstpage

388

Lastpage

391

Abstract

The punch-through protection mechanism should prevent the implants of silicon detectors from floating to arbitrarily high voltages in case of possible beam loss accidents. Typical characterization of the punch-through effect is carried out by applying an external voltage between an implant and the bias rail and measuring the resulting current. Future work will focus on quantitative understanding of the PT effect in ATLAS07 sensors, testing structures with different implantation dozes, looking at irradiated sensors, and investigating effect of backplane voltage RC bypass filter on the implant high voltages we have observed.

Keywords

RC circuits; silicon radiation detectors; ATLAS07 sensors; backplane voltage RC bypass filter; electric field collapse; external voltage; implant high voltages; loss accidents; punch-through effect; punch-through protection mechanism; silicon strip detectors; testing structures; Electrical resistance measurement; Implants; Measurement by laser beam; Resistance; Sensors; Strips; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE

Conference_Location

Knoxville, TN

ISSN

1095-7863

Print_ISBN

978-1-4244-9106-3

Type

conf

DOI

10.1109/NSSMIC.2010.5873786

Filename

5873786