DocumentCode
3526458
Title
Development of preparation technique of large-area dual-gate-structure vacuum electron source arrays using CuO nanowire emitters
Author
Li, Y.D. ; Chen, J. ; Zhang, G.F. ; Ke, Y.L. ; Xu, X.G. ; Peng, L.L. ; Huang, J.K. ; Deng, S.Z. ; Xu, N.S.
Author_Institution
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
fYear
2009
fDate
20-24 July 2009
Firstpage
177
Lastpage
178
Abstract
In this study, dual-gate-structure vacuum electron source arrays using CuO nanowire field emitters were fabricated and their potential application in field emission display has been explored. In summary, we developed a fabrication process of a dual-gate structure field emission array. This fabrication process has the advantage of a low cost and is feasible for large area fabrication.
Keywords
copper compounds; electron emission; electron sources; field emission displays; nanowires; CuO; field emission display; large-area dual-gate-structure; nanowire emitters; preparation technique development; vacuum electron source arrays; Cathodes; Costs; Electrodes; Electron sources; Fabrication; Field emitter arrays; Flat panel displays; Scanning electron microscopy; Substrates; Vacuum technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location
Shizuoka
Print_ISBN
978-1-4244-3587-6
Electronic_ISBN
978-1-4244-3588-3
Type
conf
DOI
10.1109/IVNC.2009.5271593
Filename
5271593
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