The planar light waveguide type optical amplifier fabricated by sputtering method

Author

Choi, Y.B. ; Park, S.J. ; Shin, K.S. ; Jeong, K.T. ; Cho, S.H. ; Moon, D.C.

Author_Institution

Access Network Lab., Korea Telecom, Taejeon, South Korea

Volume

2

fYear

1999

fDate

18-22 Oct. 1999

Firstpage

1634

Abstract

The planar light waveguide type optical amplifier was designed and fabricated. For the fabrication of optical amplifier, the core layer of Er-doped SiO/sub 2/ glass was deposited onto the silica cladding layer by the RF sputtering method with a deposition rate 55 /spl Aring//min. The average Er concentration of the deposited film was 0.77 wt%. Using an input signal power 20 dBm of a laser diode with 1546 nm wavelength, the gain of the optical amplifier was 5 dB with an incident pump power of 200 mW.

Keywords

amplifiers; erbium; optical communication equipment; optical fabrication; optical planar waveguides; sputter deposition; 1546 nm; 5 dB; Er concentration; Er-doped SiO/sub 2/ glass; core layer; deposited film; deposition rate; design; laser diode; planar light waveguide type optical amplifier; silica cladding layer; sputtering method; Optical amplifiers; Optical design; Optical films; Optical planar waveguides; Optical pumping; Optical waveguides; Planar waveguides; Radiofrequency amplifiers; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, 1999. APCC/OECC '99. Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference

Conference_Location

Beijing, China

Print_ISBN

7-5635-0402-8

Type

conf

DOI

10.1109/APCC.1999.820607

Filename

820607