• DocumentCode
    3527001
  • Title

    Surface structure analysis of ZnO nano-particles fabricated by pulsed Nd: YAG laser ablation under plasma circumstance

  • Author

    Ma, Qiang ; Ogino, Akihisa ; Ou, Qiongrong ; Nagatsu, Masaaki

  • Author_Institution
    Grad. Sch. of Sci. & Technol., Shizuoka Univ, Hamamatsu, Japan
  • fYear
    2009
  • fDate
    20-24 July 2009
  • Firstpage
    143
  • Lastpage
    144
  • Abstract
    In this letter, zinc oxide (ZnO) nanophosphors have been fabricated in oxygen/nitrogen plasma circumstance by Zn or ZnO targets using pulsed Nd:YAG laser ablation. Cathodoluminescence (CL) technique with energy-controlled electron beams, combined with X-ray diffraction (XRD) and X-ray photoemission spectroscopy (XPS) analyses, was used to study the structure of nano-sized ZnO particles fabricated by YAG laser ablation. The crystalline structure analysis of ZnO nanoparticles can be shown from XRD and FE-SEM result. The XPS are used to investigate the electronic structure of the nanoparticles and reveal that surface defect-relative emissions play a major role in the luminescence of ZnO.
  • Keywords
    II-VI semiconductors; X-ray diffraction; X-ray photoelectron spectra; cathodoluminescence; electronic structure; field emission electron microscopy; nanofabrication; nanoparticles; phosphors; pulsed laser deposition; scanning electron microscopy; surface structure; wide band gap semiconductors; zinc compounds; FE-SEM; X-ray diffraction; X-ray photoemission spectroscopy; XPS; XRD; ZnO; cathodoluminescence technique; crystalline structure analysis; electronic structure; energy-controlled electron beams; nanoparticle fabrication; nanophosphors; plasma circumstances; pulsed Nd:YAG laser ablation; surface defect-relative emissions; surface structure analysis; Laser ablation; Nanoparticles; Neodymium; Nitrogen; Optical pulses; Plasma x-ray sources; Surface structures; X-ray lasers; X-ray scattering; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
  • Conference_Location
    Shizuoka
  • Print_ISBN
    978-1-4244-3587-6
  • Electronic_ISBN
    978-1-4244-3588-3
  • Type

    conf

  • DOI
    10.1109/IVNC.2009.5271620
  • Filename
    5271620