Feasibility study of on-chip class E DC-DC converter

Author

Suetsugu, T. ; Kiryu, S. ; Kazimierczuk, M.K.

Author_Institution

Dept. of Electron. Eng. & Comput. Sci., Fukuoka Univ., Japan

Volume

3

fYear

2003

fDate

25-28 May 2003

Abstract

A 200 mW, 800 MHz class E DC-DC converter is designed using a 0.6 μm CMOS process and then simulated. A 22 nH spiral inductor is used in the resonant circuit. An integrated feedback controller with a VCO is used for the output voltage regulation. It is shown that the class E inverter is an excellent candidate for on-chip switching converters because of very high efficiency, and the inductor can be minimized at high operating frequencies. The simulated converter efficiency was 72% at 4.5 V output voltage, 200 mW output power, and 800 MHz switching frequency.

Keywords

CMOS integrated circuits; DC-DC power convertors; inductors; resonant invertors; switching convertors; voltage-controlled oscillators; 0.6 micron; 200 mW; 4.5 V; 72 percent; 800 MHz; CMOS process; VCO; class-E DC-DC converter; class-E inverter; integrated feedback controller; on-chip switching converter; resonant circuit; spiral inductor; voltage regulation; Adaptive control; CMOS process; Circuit simulation; DC-DC power converters; Inductors; RLC circuits; Spirals; Switching converters; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on

Print_ISBN

0-7803-7761-3

Type

conf

DOI

10.1109/ISCAS.2003.1205051

Filename

1205051