Characterization and error-correcting codes for TLC flash memories

Author

Yaakobi, Eitan ; Grupp, Laura ; Siegel, Paul H. ; Swanson, Steven ; Wolf, Jack K.

Author_Institution

Univ. of California, San Diego, La Jolla, CA, USA

fYear

2012

fDate

Jan. 30 2012-Feb. 2 2012

Firstpage

486

Lastpage

491

Abstract

Flash memory has become the storage medium of choice in portable consumer electronic applications, and high performance solid state drives (SSDs) are also being introduced into mobile computing, enterprise storage, data warehousing, and data-intensive computing systems. On the other hand, flash memory technologies present major challenges in the areas of device reliability, endurance, and energy efficiency. In this work, the error behavior of TLC flash is studied through an empirical database of errors which were induced by write, read, and erase operations. Based on this database, error characterization at the block and page level is given. To address the observed error behavior, a new error-correcting scheme for TLC flash is given and is compared with BCH and LDPC codes.

Keywords

consumer electronics; error correction codes; flash memories; TLC flash memories; data warehousing; data-intensive computing systems; energy efficiency; enterprise storage; error correcting codes; mobile computing; portable consumer electronic; reliability; solid state drives; Ash; Bit error rate; Computer architecture; Decoding; Error correction codes; Parity check codes; Vectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Computing, Networking and Communications (ICNC), 2012 International Conference on

Conference_Location

Maui, HI

Print_ISBN

978-1-4673-0008-7

Electronic_ISBN

978-1-4673-0723-9

Type

conf

DOI

10.1109/ICCNC.2012.6167470

Filename

6167470