DocumentCode
3528101
Title
Technology of single-material field-emission diode using polycrystalline diamond
Author
Cao, Zongliang ; Hatch, Sean ; Varney, Mike ; Aslam, Dean
Author_Institution
Micro & Nano Technol. Lab., Michigan State Univ. East Lansing, East Lansing, MI, USA
fYear
2009
fDate
20-24 July 2009
Firstpage
281
Lastpage
282
Abstract
This paper presents the technology of single-material field-emission diode using polycrystalline diamond. I-V characteristics are studied at different poly-C doping levels, methane concentrations and temperatures. Field emission characterization system and testing of SMFD diodes are also reported in this presentation.
Keywords
diamond; doping profiles; electron field emission; elemental semiconductors; integrated circuit interconnections; semiconductor diodes; C; I-V characteristics; SMFD diode testing; doping levels; field emission characterization; methane concentrations; polycrystalline diamond; single-material field-emission diode; Anodes; Costs; Diodes; Etching; Fabrication; Hydrogen; Iron; Plasma applications; Plasma density; Plasma temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location
Shizuoka
Print_ISBN
978-1-4244-3587-6
Electronic_ISBN
978-1-4244-3588-3
Type
conf
DOI
10.1109/IVNC.2009.5271682
Filename
5271682
Link To Document