DocumentCode
3528726
Title
Metal technology for advanced CMOS devices
Author
Mogami, Tohru
Author_Institution
Silicon Syst. Res. Lab., NEC Corp., Sagamihara, Japan
fYear
1999
fDate
1999
Firstpage
125
Lastpage
129
Abstract
Metal technologies for gate and deep-SD are very important in advanced CMOS devices, because of challenging high-performance System On Chip (SOC). These technologies are required due to not only resistance reduction but also process integration for SOC. Poly-metal gate MOSFETs and salicided CMOS devices should be more improved from the viewpoint of both device performance and process integration
Keywords
MOSFET; semiconductor device metallisation; CMOS device; MOSFET; electrical resistance; metal gate technology; polycide; process integration; salicide; system-on-a-chip; CMOS process; CMOS technology; Crystalline materials; Grain size; Immune system; Inorganic materials; MOSFETs; Resistance heating; Sheet materials; Silicides;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location
Seoul
Print_ISBN
0-7803-5727-2
Type
conf
DOI
10.1109/ICVC.1999.820845
Filename
820845
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