DocumentCode
3528845
Title
Evaluation of plasma-induced charging damage on metal contact process
Author
Shin, Kyoung-Sub ; Kim, Ji-Soo ; Park, Wan-Jae ; Kang, Chang-Jin ; Ahn, Tae-Hyuk ; Moon, Joo-Tae ; Lee, Sang-In
Author_Institution
SAMSUNG Electron. Co. Ltd., Kyungki, South Korea
fYear
1999
fDate
1999
Firstpage
143
Lastpage
146
Abstract
The evaluation of plasma-induced charging damage in a metal contact process has been studied with a two dimensional Monte-Carlo simulation and related experiments. From the simulation, it is concluded that the linear shrinkage of the design rule possibly evokes exponential plasma-induced charging damage on the gate oxide during the plasma process. We also confirmed the simulation results with the two different experiments, in-situ charge-up monitoring wafers and fully fabricated test wafers. A phase-controlled pulsed inductively coupled plasma is proposed to suppress the plasma-induced charging damage. Preliminary results show that charging damage is strongly suppressed when the phase delay of the bias power to the source power is near to 180 degrees
Keywords
CMOS integrated circuits; MOSFET; Monte Carlo methods; integrated circuit metallisation; plasma materials processing; process monitoring; semiconductor process modelling; surface charging; surface potential; 0.18 mum; CMOS technology; NMOS; PMOS; bias power phase delay; charging damage suppression; design rule linear shrinkage; exponential plasma-induced charging damage; fabricated test wafers; gate oxide; in-situ charge-up monitoring wafers; metal contact process; phase-controlled pulsed inductively coupled plasma; plasma-induced charging damage; surface potential; two dimensional Monte-Carlo simulation; Current measurement; Electrons; Monitoring; Plasma density; Plasma devices; Plasma measurements; Plasma simulation; Plasma sources; Plasma temperature; Probes;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location
Seoul
Print_ISBN
0-7803-5727-2
Type
conf
DOI
10.1109/ICVC.1999.820853
Filename
820853
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