Monte Carlo simulation of radiation effects in microelectronics

Author

Weller, Robert A. ; Mendenhall, Marcus H. ; Reed, Robert A. ; Warren, Kevin M. ; Sierawski, Brian D. ; Schrimpf, Ronald D. ; Massengill, Lloyd W. ; Asai, Makoto

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

fYear

2010

fDate

Oct. 30 2010-Nov. 6 2010

Firstpage

1262

Lastpage

1268

Abstract

In this paper, we describe a Monte Carlo method for computing the frequency and characteristics of single event effects in microelectronic devices. The method combines detailed physical modeling of individual radiation events, device simulations to estimate charge collection, and circuit simulations to determine the system-level effects of collected charge. A mathematical analysis of the Monte Carlo method is given, and with appropriate assumptions is shown to reduce to the rectangular parallelepiped (RPP) rate prediction method. A computer implementation of the method is described and results of a sample calculation are presented.

Keywords

Monte Carlo methods; monolithic integrated circuits; radiation effects; semiconductor devices; Monte Carlo simulation; charge collection; circuit simulations; device simulations; mathematical analysis; microelectronic devices; radiation effects; rectangular parallelepiped rate prediction method; single event effect characteristics; single event effect frequency; system level effects; Computational modeling; Integrated circuit modeling; Mathematical model; Monte Carlo methods; Physics; Predictive models; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE

Conference_Location

Knoxville, TN

ISSN

1095-7863

Print_ISBN

978-1-4244-9106-3

Type

conf

DOI

10.1109/NSSMIC.2010.5873969

Filename

5873969