Micromachined layered thin film magnetoimpedance element

Author

Yamadera, H. ; Nishibe, Y. ; Ohta, N. ; Tsukada, A. ; Sugitani, N.

Author_Institution

Toyota Central Res. & Dev. Lab., Inc., Aichi, Japan

fYear

2005

fDate

4-8 April 2005

Firstpage

393

Lastpage

394

Abstract

This paper presents a micromachined layered magnetoimpedance (MI) element consisting of a CoNbZr/Al/CoNbZr film and its MI properties were investigated. Sensitivity defined as maximum fractional change in impedance changed with thickness and dimension. The values for which MI element had the best properties were 45% for the sensitivity, 5% for the fractional change in impedance dependent on temperature. These values were much better than those of integrated magnetoresistance (MR) sensors. Therefore, these micromachined elements have great potential use in integrated magnetic sensors.

Keywords

aluminium alloys; cobalt alloys; magnetic fields; magnetic sensors; magnetic thin films; magnetoresistance; micromachining; niobium alloys; zirconium alloys; CoNbZr-Al; fractional change; impedance; integrated magnetic sensors; integrated magnetoresistance sensors; magnetic field sensitivity; micromachined layered magnetoimpedance element; Amorphous magnetic materials; Impedance; Magnetic anisotropy; Magnetic field measurement; Magnetic films; Magnetic properties; Magnetic sensors; Magnetostriction; Perpendicular magnetic anisotropy; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1463625

Filename

1463625