• DocumentCode
    3530901
  • Title

    Patterning effect at 40 Gbit/s of wavelength converter utilizing cross-phase modulation in InGaAsP/InP electroabsorption modulator

  • Author

    Nishimura, Kohsuke ; Inohara, Ryo ; Tsurusawa, Munefumi ; Usami, Masashi

  • Author_Institution
    KDDI R&D Labs. Inc., Saitama, Japan
  • fYear
    2003
  • fDate
    12-16 May 2003
  • Firstpage
    198
  • Lastpage
    201
  • Abstract
    Cross-absorption and cross-phase modulation in an InGaAsP/InP electroabsorption modulator (EAM) were experimentally analyzed. The patterning effect of the EAM-based delayed-interferometric wavelength converter was studied by numerical simulation based on the experimental results.
  • Keywords
    III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical communication equipment; optical wavelength conversion; wavelength division multiplexing; 40 Gbit/s; EAM-based delayed-interferometric wavelength converter; InGaAsP-InP; InGaAsP/InP electroabsorption modulator; cross-absorption; cross-phase modulation; patterning effect; wavelength converter; Absorption; Indium phosphide; Insertion loss; Nonlinear optics; Optical fiber networks; Optical modulation; Optical signal processing; Optical wavelength conversion; Phase modulation; Polarization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2003. International Conference on
  • Print_ISBN
    0-7803-7704-4
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2003.1205348
  • Filename
    1205348
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3530901