High-speed optical modulator based on intersubband transitions in InGaAs/InAlAs/AlAsSb coupled quantum wells

Author

Jänes, P. ; Holmström, P.

Author_Institution

Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden

fYear

2003

fDate

12-16 May 2003

Firstpage

308

Lastpage

311

Abstract

We investigate theoretically an optical modulator based on intersubband transitions in InGaAs/InAlAs/AlAsSb coupled quantum wells with an operating wavelength of 1.55 μm. We show that such a modulator has the potential to outperform conventional electroabsorption and electro-optic modulators with a combination of high speed, moderate voltage swing, negative chirp and high saturation power. The modulator studied here is predicted to have a RC-limited speed of 90 GHz with 10 dB extinction ratio at a peak-to-peak voltage of 2.0 V.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical modulation; quantum well devices; semiconductor device models; semiconductor quantum wells; 1.55 micron; InGaAs-InAlAs-AlAsSb; InGaAs/InAlAs/AlAsSb coupled quantum wells; high-speed optical modulators; intersubband transitions; Chirp modulation; Electrooptic modulators; High speed optical techniques; Indium compounds; Indium gallium arsenide; Optical coupling; Optical modulation; Optical saturation; Quantum mechanics; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205377

Filename

1205377