Counting rate performance measurement of newly developed Si/CdTe Compton camera for biological and medical applications

Author

Yamaguchi, Mitsutaka ; Kawachi, Naoki ; Kamiya, Tomihiro ; Suzui, Nobuo ; Fujimaki, Shu ; Odaka, Hirokazu ; Ishikawa, Shinnosuke ; Kokubun, Motohide ; Watanabe, Shin ; Takahashi, Tadayuki ; Shimada, Hirofumi ; Arakawa, Kazuo ; Suzuki, Yoshiyuki ; Torikai,

Author_Institution

Japan Atomic Energy Agency, Takasaki, Japan

fYear

2010

fDate

Oct. 30 2010-Nov. 6 2010

Firstpage

2004

Lastpage

2007

Abstract

In this study, the counting rate performance of a newly developed Compton camera for biological and medical applications was investigated; further, the sensitivity profile of this highly complicated imaging system was measured using ²²Na and ¹⁸F point gamma-ray sources. ²²Na was used to assess the imaging ability of this camera against the point source, and the intense ¹⁸F point source of 200 MBq was used to measure the sensitivity profiles of this camera for a range of counting rates over a short period.

Keywords

II-VI semiconductors; cadmium compounds; elemental semiconductors; radioisotope imaging; silicon; silicon radiation detectors; wide band gap semiconductors; Compton camera; Si-CdTe; biological applications; counting rate performance; medical applications; point gamma ray sources; radioactivity 200 MBq; sensitivity profile; Cameras; Decision support systems; Detectors; Extraterrestrial measurements; Head; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE

Conference_Location

Knoxville, TN

ISSN

1095-7863

Print_ISBN

978-1-4244-9106-3

Type

conf

DOI

10.1109/NSSMIC.2010.5874127

Filename

5874127