Pulsed YAG-laser disordering of InGaAsP superlattices and its application to wavelength trimming of multi-λ gain-coupled DFB laser arrays

Author

Asawamethapant, Weerachai ; Nakano, Yoshiaki

Author_Institution

Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Japan

fYear

2003

fDate

12-16 May 2003

Firstpage

347

Lastpage

350

Abstract

We describe photo-absorption-induced disordering of superlattices by second-harmonic YAG laser pulses. The process is controllable by adjusting the number of pulse shots irradiated, pulse shot energy, and background temperature. Its application to wavelength channel adjustment, or wavelength trimming, of a 5-λ gain-coupled DFB laser array is presented.

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser beam effects; laser materials processing; laser tuning; quantum well lasers; semiconductor laser arrays; semiconductor superlattices; InGaAsP; InGaAsP superlattices; YAG; YAl5O12; background temperature; irradiated pulse shots; multi-wavelength gain-coupled DFB laser arrays; photo-absorption-induced disordering; pulse shot energy; pulsed YAG-laser disordering; second-harmonic YAG laser pulses; wavelength channel adjustment; wavelength trimming; Distributed feedback devices; Laser feedback; Laser theory; Laser transitions; Optical arrays; Optical device fabrication; Optical pulses; Quantum well lasers; Semiconductor laser arrays; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205386

Filename

1205386