DocumentCode
3531373
Title
High efficiency dual-integrated stacked microstructured solid-state neutron detectors
Author
Bellinger, S.L. ; Fronk, R.G. ; McNeil, W.J. ; Sobering, T.J. ; McGregor, D.S.
Author_Institution
SMART Lab., Kansas State Univ., Manhattan, KS, USA
fYear
2010
fDate
Oct. 30 2010-Nov. 6 2010
Firstpage
2008
Lastpage
2012
Abstract
Silicon diodes with large aspect ratio perforated microstructures backfilled with 6LiF show a dramatic increase in neutron detection efficiency beyond that of conventional thin-film coated planar devices. Described in this work are advancements in the technology using detector stacking methods to increase thermal neutron detection efficiency. The highest efficiency devices thus far have delivered over 42% intrinsic thermal neutron detection efficiency by device-coupling stacking methods. The detectors operate as conformally diffused pn junction diodes each having 1cm2 square-area. Two individual devices were mounted back-to-back with counting electronics coupling the detectors together into a single dual-detector device. The solid-state silicon device operated at 3V and utilized simple signal amplification and counting electronic components. The intrinsic detection efficiency for normal-incident 0.0253 eV neutrons was found by calibrating against a calibrated 3He proportional counter.
Keywords
calibration; helium-3 counters; neutron detection; nuclear electronics; semiconductor counters; solid-state nuclear track detectors; thin film devices; 3He proportional counter; 6LiF; calibration; conventional thin-film coated planar devices; counting electronic components; counting electronics coupling; device-coupling stacking methods; diffused junction diodes; dual-integrated stacked microstructured solid-state neutron detector; microstructured semiconductor neutron detectors; normal-incident neutrons; perforated microstructures; signal amplification; silicon diodes; single dual-detector device; thermal neutron detection efficiency; Detectors; Microstructure; Neutrons; Semiconductor device measurement; Semiconductor diodes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE
Conference_Location
Knoxville, TN
ISSN
1095-7863
Print_ISBN
978-1-4244-9106-3
Type
conf
DOI
10.1109/NSSMIC.2010.5874128
Filename
5874128
Link To Document