• DocumentCode
    3531373
  • Title

    High efficiency dual-integrated stacked microstructured solid-state neutron detectors

  • Author

    Bellinger, S.L. ; Fronk, R.G. ; McNeil, W.J. ; Sobering, T.J. ; McGregor, D.S.

  • Author_Institution
    SMART Lab., Kansas State Univ., Manhattan, KS, USA
  • fYear
    2010
  • fDate
    Oct. 30 2010-Nov. 6 2010
  • Firstpage
    2008
  • Lastpage
    2012
  • Abstract
    Silicon diodes with large aspect ratio perforated microstructures backfilled with 6LiF show a dramatic increase in neutron detection efficiency beyond that of conventional thin-film coated planar devices. Described in this work are advancements in the technology using detector stacking methods to increase thermal neutron detection efficiency. The highest efficiency devices thus far have delivered over 42% intrinsic thermal neutron detection efficiency by device-coupling stacking methods. The detectors operate as conformally diffused pn junction diodes each having 1cm2 square-area. Two individual devices were mounted back-to-back with counting electronics coupling the detectors together into a single dual-detector device. The solid-state silicon device operated at 3V and utilized simple signal amplification and counting electronic components. The intrinsic detection efficiency for normal-incident 0.0253 eV neutrons was found by calibrating against a calibrated 3He proportional counter.
  • Keywords
    calibration; helium-3 counters; neutron detection; nuclear electronics; semiconductor counters; solid-state nuclear track detectors; thin film devices; 3He proportional counter; 6LiF; calibration; conventional thin-film coated planar devices; counting electronic components; counting electronics coupling; device-coupling stacking methods; diffused junction diodes; dual-integrated stacked microstructured solid-state neutron detector; microstructured semiconductor neutron detectors; normal-incident neutrons; perforated microstructures; signal amplification; silicon diodes; single dual-detector device; thermal neutron detection efficiency; Detectors; Microstructure; Neutrons; Semiconductor device measurement; Semiconductor diodes; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE
  • Conference_Location
    Knoxville, TN
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-9106-3
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2010.5874128
  • Filename
    5874128