Extension of emission wavelength of GaInNAs QDs grown on GaAs [001]

Author

Nishikawa, A. ; Hong, Y.G. ; Tu, C.W.

Author_Institution

Dept. of Electr. & Comput. Sci. Eng., California Univ., San Diego, La Jolla, CA, USA

fYear

2003

fDate

12-16 May 2003

Firstpage

359

Lastpage

360

Abstract

Recently, we have shown that by optimizing the growth condition, the photoluminescence intensity and full width at half maximum (FWHM) of GaInNAs QDs can be improved to be comparable to those of GaInAs QDs. In this study, we investigate the nominal thickness and barrier material of GaInNAs QDs in order to extend the emission wavelength to longer regimes. The longest wavelengths we have achieved are 1.38 μm at 10 K and 1.48 μm at room temperature with the PL intensity at 10 K only 1/15 of that of GaInAs QD.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum dots; 1.38 micron; 1.48 micron; 10 K; 293 to 300 K; FWHM; GaAs; GaAs [001]; GaInNAs; GaInNAs QD; PL intensity; barrier material; emission wavelength extension; full width at half maximum; growth condition; nominal thickness; photoluminescence intensity; room temperature; Atomic force microscopy; Computer science; Degradation; Gallium arsenide; Multilevel systems; Nitrogen; Quantum computing; Quantum dot lasers; Substrates; Tensile strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205389

Filename

1205389