Some design issues in ultra high frequency ICs in InP-DHBT technology

Author

Mokhtari, Mehran

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

fYear

2003

fDate

12-16 May 2003

Firstpage

365

Lastpage

369

Abstract

Design issues and experiences in some of HRL´s recent demonstrated state-of-the-art circuits are presented and discussed. The performance of static dividers and voltage controlled oscillators, has been significantly improved by utilizing the high break-down voltage of the DHBT. The technology utilized here offers an f_T of about 135 GHz, and a current gain of about 30. The dividers and VCOs designed in this technology exhibit toggling frequencies beyond 100 GHz and phase noise less than -80 dBc/Hz @ 100 KHz from carrier (44 GHz in this case), respectively.

Keywords

III-V semiconductors; bipolar transistor circuits; heterojunction bipolar transistors; indium compounds; integrated circuit design; integrated circuit measurement; semiconductor device breakdown; voltage dividers; voltage-controlled oscillators; InP; InP-DHBT technology; break-down voltage; design issues; phase noise; static dividers; ultra high frequency ICs; voltage controlled oscillators; Circuits; DH-HEMTs; FETs; Frequency; Heterojunction bipolar transistors; Indium phosphide; Optical resonators; Phase noise; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205391

Filename

1205391