• DocumentCode
    3531495
  • Title

    Over 2,000 hours of RT-CW operation of GaInAsP/InP vertically-stacked multiple-quantum-wire laser

  • Author

    Yagi, Hideki ; Sano, Tomomi ; Ohira, Kazuya ; Maruyama, Tetsuhiro ; Haque, Ashraful

  • Author_Institution
    Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
  • fYear
    2003
  • fDate
    12-16 May 2003
  • Firstpage
    378
  • Lastpage
    379
  • Abstract
    A RT-CW operation of GaInAsP/InP quantum-wire lasers (23 nm wide, 5 stacked quantum-wires) fabricated by EB lithography, CH4/H2-RIE and OMVPE regrowth was realized for the first time. No noticeable degradation was observed even after 2,000 hours´ at RT-CW condition.
  • Keywords
    III-V semiconductors; MOCVD coatings; electron beam lithography; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; semiconductor quantum wires; sputter etching; surface emitting lasers; vapour phase epitaxial growth; 2000 h; 23 nm; CH4/H2-RIE; GaInAsP-InP; GaInAsP/InP vertically-stacked multiple-quantum-wire laser; OMVPE regrowth; RT-CW operation; electron beam lithography; Distributed feedback devices; Etching; Indium phosphide; Laser feedback; Lifetime estimation; Lithography; Optical device fabrication; Scanning electron microscopy; Threshold current; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2003. International Conference on
  • Print_ISBN
    0-7803-7704-4
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2003.1205394
  • Filename
    1205394
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3531495