Optimisation of buffer layers for InP-metamorphic heterojunction bipolar transistor on GaAs

Author

Lefebvre, E. ; Zaknoune, M. ; Cordier, Y. ; Mollot, F.

Author_Institution

Inst. d´´Electronique, de Microelectronique et de Nanotechnologie, Villeneuve d´´Ascq, France

fYear

2003

fDate

12-16 May 2003

Firstpage

409

Lastpage

412

Abstract

InP-like metamorphic buffers on GaAs for double heterojunction bipolar transistor (mDHBT) have been grown by molecular beam epitaxy. A two-stage procedure dedicated to DHBT is proposed to study the effect of the metamorphic growth. First, a DHBT-like InP/InGaAs/InP structure is used to evaluate bulk materials quality by photoluminescence, relaxation state by double axis high-resolution X-ray diffraction and surface/interface morphology by optical and atomic force microscopy. Secondly, the emitter-base junction has been studied on metamorphic diodes. First results obtained on In_xAl_1-xAs and ln_x(Al_yGa_1-y)_1-xAs gradual buffers, as well as on In_0.52Al_0.48As and InP uniform buffers, are presented and discussed.

Keywords

III-V semiconductors; X-ray diffraction; atomic force microscopy; heterojunction bipolar transistors; indium compounds; interface structure; photoluminescence; surface morphology; GaAs; In_0.52Al_0.48As; InAlAs; InAlGaAs; InGaAs; InP; InP-metamorphic heterojunction bipolar transistor; X-ray diffraction; atomic force microscopy; buffer layers; interface morphology; molecular beam epitaxy; optimisation; photoluminescence; surface morphology; Atom optics; Atomic force microscopy; Buffer layers; Double heterojunction bipolar transistors; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205402

Filename

1205402