1.3 to 1.5 μm range emission from InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

Author

Hsieh, T.-P. ; Yeh, N.T. ; Chiu, P.C. ; Huang, K.-F. ; Ho, W.-C. ; Wu, M.-C. ; Chyi, J.-I.

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan

fYear

2003

fDate

12-16 May 2003

Firstpage

456

Lastpage

459

Abstract

In this paper, we demonstrated the long wavelength light emission from InAs quantum dots (QDs) directly capped with GaAs or covered with InGaAs strain reducing layer (SRL) grown by metalorganic chemical vapor deposition (MOCVD). These long wavelength QDs are grown by interrupted growth method with AsH₃ as V group precursors. 1.3 μm light emission is observed as the QD directly capped with GaAs. By inserting 6 nm In_0.25Ga_0.75As, longer emission wavelength of 1.49 μm is observed for the InAs quantum dots.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; internal stresses; photoluminescence; semiconductor quantum dots; 1.3 to 1.5 micron; 6 nm; AsH₃; InAs-GaAs; InAs/GaAs quantum dots; InGaAs; InGaAs strain reducing layer; MOCVD; interrupted growth method; long wavelength light emission; metalorganic chemical vapor deposition; photoluminescence; Capacitive sensors; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Indium gallium arsenide; Intrusion detection; MOCVD; Quantum dot lasers; Quantum dots; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205415

Filename

1205415