Growth of highly p-type doped GaAsSb:C for HBT application

Author

Neumann, S. ; Prost, W. ; Tegude, F.J.

Author_Institution

Solid State Electron. Dept., Univ. Duisburg, Essen, Germany

fYear

2003

fDate

12-16 May 2003

Firstpage

575

Lastpage

578

Abstract

We present the growth of highly carbon doped GaAsSb on InP substrate with LP-MOVPE and nitrogen carrier gas. Carbon doped GaAsSb lattice matched on InP is of pronounced interest for high speed double heterostructure bipolar transistors. We observed a significant effect of the nitrogen carrier gas on the growth behavior which results in a lower distribution coefficient. A linear doping behaviour with small CBr₄ flows up to p=4×10¹⁹ cm^-3 can be observed and first realized DHBT structures show preliminary f_T and f_MAX values of 100 GHz and 60GHz, respectively.

Keywords

III-V semiconductors; MOCVD coatings; carbon; carrier density; gallium arsenide; gallium compounds; heavily doped semiconductors; heterojunction bipolar transistors; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 100 GHz; 60 GHz; GaAsSb:C; HBT application; InP; InP substrate; LP-MOVPE; growth behavior; high speed double heterostructure bipolar transistors; highly p-type doped GaAsSb:C; linear doping behaviour; lower distribution coefficient; Bipolar transistors; Doping; Heterojunction bipolar transistors; Hydrogen; Indium phosphide; Lattices; Nitrogen; Solids; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205446

Filename

1205446