Fabrication of a vertical MRAM device

Author

Moneck, Matthew T. ; Zhu, C.

Author_Institution

Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA

fYear

2005

fDate

4-8 April 2005

Firstpage

849

Lastpage

850

Abstract

The fabrication and testing of annular shaped memory elements at the deep submicron scale is presented using combined electron beam and optical lithographic techniques. The device structures were designed for four-point probe measurements of a single ring, two rings in series, or four rings in series. The fabricated rings had a 600 nm outer diameters, 200 nm inner diameter, and consisted of three repeats of a CoFe/Cu/NiFe CPP GMR stack.

Keywords

cobalt alloys; copper; electron beam lithography; giant magnetoresistance; iron alloys; magnetic storage; nickel alloys; photolithography; random-access storage; CoFe-Cu-NiFe; GMR; annular shaped memory elements; deep submicron scale; electron beam lithography; four-point probe measurement; optical lithography; vertical MRAM device; Electron beams; Etching; Giant magnetoresistance; Magnetic confinement; Magnetic devices; Magnetic switching; Milling; Optical device fabrication; Silicon compounds; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1463853

Filename

1463853

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3533511