• DocumentCode
    3533849
  • Title

    Reverse-conducting-IGBTs — A new IGBT technology setting new benchmarks in traction converters

  • Author

    Hermann, Robert ; Krafft, Eberhard Ulrich ; Marz, Andreas

  • Author_Institution
    Siemens AG Germany, Nuremberg, Germany
  • fYear
    2013
  • fDate
    2-6 Sept. 2013
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    In this paper the main advantages of 6.5 kV Reverse Conducting IGBTs (RC-IGBTs) compared to state-of-the-art two-chip IGBT/Diode solutions for traction applications are discussed. The experimental results show the potential of RC-IGBTs as well as the increased requirements on the gate control strategy.
  • Keywords
    insulated gate bipolar transistors; power bipolar transistors; power field effect transistors; traction power supplies; gate control strategy; reverse-conducting-IGBT; traction converters; voltage 6.5 V; Charge carriers; Electronic mail; Facsimile; Insulated gate bipolar transistors; Logic gates; Semiconductor diodes; Switches; Diode; IGBT; Traction converter;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications (EPE), 2013 15th European Conference on
  • Conference_Location
    Lille
  • Type

    conf

  • DOI
    10.1109/EPE.2013.6631806
  • Filename
    6631806
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3533849