Preparation and characterization of Hg doped ZnO nanorods

Author

Saravanan, R. ; Kumaresan, M. ; Stephen, A. ; Prakash, T. ; Narayanan, V.

Author_Institution

Dept. of Nucl. Phys., Univ. of Madras, Chennai, India

fYear

2011

fDate

28-30 Nov. 2011

Firstpage

238

Lastpage

240

Abstract

The nanorods of Hg doped ZnO was prepared by thermal decomposition of using acetate precursors. The prepared samples were characterized by various techniques. The structure and size of the materials were confirmed by X-ray diffraction (XRD), and transmission electron microscopy (TEM). Morphology and elemental composition of the prepared materials were analysed using field emission scanning electron microscopy (FE-SEM) and energy-dispersive X-ray spectroscopy. The UV-VIS absorption measurements using to determine the band gap of the materials.

Keywords

II-VI semiconductors; X-ray chemical analysis; X-ray diffraction; field emission electron microscopy; mercury (metal); nanofabrication; nanorods; scanning electron microscopy; semiconductor doping; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; FE-SEM; TEM; UV-vis absorption measurements; X-ray diffraction; XRD; ZnO:Hg; acetate precursors; band gap; elemental composition; energy-dispersive X-ray spectroscopy; field emission scanning electron microscopy; morphological study; nanorods; thermal decomposition; transmission electron microscopy; Absorption; Materials; Photonic band gap; X-ray diffraction; X-ray imaging; X-ray scattering; Zinc oxide; Nanorods; Thermal decomposition method; Transmission electron microscopy; optical property;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoscience, Engineering and Technology (ICONSET), 2011 International Conference on

Conference_Location

Chennai

Print_ISBN

978-1-4673-0071-1

Type

conf

DOI

10.1109/ICONSET.2011.6167929

Filename

6167929