Nanoscale domain imaging in nano-crystalline W-doped PZT

Nanoscale piezoelectricity in nanosized Pb (Zr, Ti)O₃ (PZT) materials were carried out for understanding their basic properties which will be useful in device fabrication. Nanosized W-doped and pure PZT materials were synthesized by chemical method using sol-gel processing and characterized using XRD, AFM and SEM. The grain size was reduced from ~ 50nm for pure pzt to ~ 25nm for 0.5% W doped PZT. AFAM and PFM studies on sintered pellets were carried out using stiff cantilever for getting information on morphological and other local physical properties. Piezo response was found to vary spatially for nano domains in both the doped and undoped materials. Piezoresponse spectroscopy was carried out on these PZT pellets and then this response was also compared. Hysteresis loops were obtained at various bias voltages. The average value of piezoelectric coefficient (d33) for W-doped PZT (>;120 pm/V) was found to be more than that of pure PZT (>; 36 pm/V). Stiffness of piezo domains in these materials was also calculated and found to have higher values. Results showed that the mechanical propertied of PZT improved with an addition of the dopant.