Synthesis and characterization of gallium nitride nanorods (GaN-NRs) for sensor and catalysis applications

One-dimensional GaN nanostructures have been synthesized using a chemical vapour deposition (CVD) method. GaN nanorods were readily formed in the presence of carbon. This paper describes the role of carbon in the synthesis. The GaN nanorods were of high crystallinity and purity as revealed by XRD analysis. TEM and SEM analysis revealed that the nanorods possess diameters in the range of 50 - 450 nm, which could be controlled by varying the synthesis conditions such as gas flow rates and synthesis time. BET surface area analysis revealed very high surface areas of up 1023 m²/g for these materials. TGA revealed that the GaN materials are thermally stable.