DocumentCode
3534996
Title
Surface, structural and optical analysis of Fe doped nanocrystalline ZnO films as transducer
Author
Chaitra, V. ; Shamala, K.S. ; Uma, V.
Author_Institution
Mount Carmel Coll., Bangalore, India
fYear
2011
fDate
28-30 Nov. 2011
Firstpage
441
Lastpage
445
Abstract
In this paper, nano crystalline Fe-doped ZnO films were prepared by spray pyrolysis on Si and Glass substrates. The influence of Fe on structural, optical and Electrical Conductance Studies has been discussed. The films were configured as capacitor and their behavior such as I-V and C-V characteristics were studied. The X-ray diffraction (XRD) analyses show that all the ZnO thin films prepared in this work have a hexagonal wurtzite structure and are preferentially oriented along the c-axis perpendicular to the substrate surface. After 1 at% Fe is doped, the preferential orientation has improved but higher at%, it has weakened in-turn. The surface morphology analyses of the samples show that the ZnO grain sizes tend to increase with the increase of Fe-doping concentration. AFM images of the as-deposited films revealed that the particles are mono-dispersed with clearly spherical morphology and the area roughness was measured for all the samples. From the optical studies, transmittances of the films were found to be around 80%. With increase in Fe doping concentration the optical band gap energies of the films were found to shift (i.e. red-shift) to lower energies, indicating that the material is moving towards the conducting region. The I-V characteristics show INon linear indicating that the identical barriers at both contacts monitored in a two-point arrangements. C-V characteristics show that clearly the inversion, accumulation and depletions regions, indicating that this can be used as transducers.
Keywords
II-VI semiconductors; X-ray diffraction; atomic force microscopy; doping profiles; energy gap; grain size; iron; nanofabrication; nanoparticles; optical constants; pyrolysis; red shift; semiconductor doping; semiconductor growth; semiconductor thin films; spraying; surface morphology; surface roughness; texture; thin film capacitors; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; AFM; Si; SiO2; UV-visible spectra; X-ray diffraction; XRD; ZnO:Fe; accumulation; atomic force microsopy; c-axis orientation; capacitors; current-voltage properties; electrical conductivity; glass substrates; grain size; hexagonal wurtzite structure; inversion; iron doped nanocrystalline zinc oxide thin films; iron doping concentration; monodispersed particle; optical band gap energy; optical properties; red shift; silicon substrates; spherical morphology; spray pyrolysis; structural properties; surface morphology; surface properties; surface roughness; transducer; two-point arrangements; Capacitance; Doping; Optical films; Optical imaging; Optical surface waves; Zinc oxide; AFM; SEM; Structural; electrical conductanc; nanocrystalline; optical;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoscience, Engineering and Technology (ICONSET), 2011 International Conference on
Conference_Location
Chennai
Print_ISBN
978-1-4673-0071-1
Type
conf
DOI
10.1109/ICONSET.2011.6167999
Filename
6167999
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