DocumentCode
3535097
Title
Room temperature operation of single electron transistor made by STM nano-oxidation process
Author
Matsumoto, K. ; Ishii, M. ; Segawa, K. ; Oka, Y. ; Vartanian, B.J. ; Harris, J.S.
Author_Institution
Electrotech. Lab., Ibaraki, Japan
fYear
1995
fDate
19-21 June 1995
Firstpage
46
Lastpage
47
Abstract
A single electron transistor (SET) operating at room temperature was fabricated for the first time using a scanning tunneling microscope (STM) nano-oxidation process. A clear Coulomb staircase with an /spl sim/140 mV period and Coulomb oscillation period of /spl sim/460 mV were observed at 300K.
Keywords
microscopy; nanotechnology; oxidation; scanning tunnelling microscopy; semiconductor technology; single electron transistors; tunnel transistors; 300 K; Coulomb oscillation; Coulomb staircase; STM nano-oxidation; fabrication; room temperature operation; scanning tunneling microscope; single electron transistor; Capacitance; Cathodes; Current measurement; Laboratories; Oxidation; Scanning electron microscopy; Single electron transistors; Temperature measurement; Titanium; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location
Charlottesville, VA, USA
Print_ISBN
0-7803-2788-8
Type
conf
DOI
10.1109/DRC.1995.496264
Filename
496264
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