Nano electronic modelling (NEMO)

Author

Klimeck, G. ; Lake, R. ; Bowen, R.C. ; Frensley, W.R. ; Blanks, D.

Author_Institution

Erik Jonsson Sch. of Electr. Eng. & Comput. Sci., Texas Univ., Dallas, TX, USA

fYear

1995

fDate

19-21 June 1995

Firstpage

52

Lastpage

53

Abstract

The design of resonant tunneling based quantum devices requires accurate modeling of the quantum charge, resonant levels, and scattering effects in extremely complicated and varied potential profiles made possible by the great flexibility of heteroepitaxial based band engineering. Until now, such a device simulator did not exist. We unveil an alpha version of such a tool. It is planned for this tool to become available to the national R&D community. The tool solves the non-equilibrium Green function equations including realistic models for the important scattering mechanisms.

Keywords

Green´s function methods; nanotechnology; quantum interference devices; resonant tunnelling diodes; semiconductor device models; NEMO; heteroepitaxial based band engineering; nanoelectronic modelling; nonequilibrium Green function equations; potential profiles; quantum charge; resonant levels; resonant tunneling based quantum devices; scattering effects; Acoustic scattering; Boundary conditions; Optical scattering; Particle scattering; Phonons; Quantum computing; Research and development; Resonance; Resonant tunneling devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1995. Digest. 1995 53rd Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-2788-8

Type

conf

DOI

10.1109/DRC.1995.496267

Filename

496267