• DocumentCode
    3535165
  • Title

    Multiparameter OFET sensor at low power

  • Author

    Das, A. ; Tyagi, A.K. ; Grell, M. ; Richardson, T.H. ; Turner, M.L.

  • Author_Institution
    Surface & Nanosci. Div., Indira Gandhi Centre for Atomic Res., Kalpakkam, India
  • fYear
    2011
  • fDate
    28-30 Nov. 2011
  • Firstpage
    500
  • Lastpage
    504
  • Abstract
    Sensitive, reproducible multi-parameter sensor properties are demonstrated by using an amorphous organic semiconductor as an active layer of the field effect transistor. Anodized aluminium as a nano gate insulator allowed low power OFET fabrication. Utility of such device over the chemiresistor is described. A highly sensitive NO2 sensor that shows selectivity over a range of analytes e.g. alcohols, acetone and toxic vapour (DMMP) is discussed.
  • Keywords
    chemical sensors; low-power electronics; nitrogen compounds; organic field effect transistors; NO2; acetone vapour; amorphous organic semiconductor; anodized aluminium; low power OFET fabrication; multiparameter OFET sensor; multiparameter sensor properties; nanogate insulator; toxic vapour; Gate insulator; Organic Transistor; Sensor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoscience, Engineering and Technology (ICONSET), 2011 International Conference on
  • Conference_Location
    Chennai
  • Print_ISBN
    978-1-4673-0071-1
  • Type

    conf

  • DOI
    10.1109/ICONSET.2011.6168013
  • Filename
    6168013
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3535165