DocumentCode
3535475
Title
Normal incident intersubband infrared detector using n-type InGaAs/GaAs quantum wells
Author
Karunasiri, G. ; Shih, R. ; Chen, J.
Author_Institution
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
fYear
1995
fDate
19-21 June 1995
Firstpage
122
Lastpage
123
Abstract
Recently, normal incident intersubband absorption has been observed using InGaAs based quantum well structures. In this abstract, we report the first demonstration of a normal incident infrared detector using n-type In/sub x/Ga/sub 1-x/As/GaAs multiple quantum wells.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; semiconductor quantum wells; InGaAs-GaAs; infrared detector; n-type In/sub x/Ga/sub 1-x/As/GaAs multiple quantum wells; normal incident intersubband absorption; Electromagnetic wave absorption; Face detection; Gallium arsenide; Gratings; Indium gallium arsenide; Infrared detectors; Infrared spectra; Optical polarization; Tellurium; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location
Charlottesville, VA, USA
Print_ISBN
0-7803-2788-8
Type
conf
DOI
10.1109/DRC.1995.496296
Filename
496296
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