Improvement of porous silicon EL efficiency during anodic oxidation and the application of a new microstructure analysis method

Author

Sakai, T. ; Suzuki, T. ; Li Zhang

Author_Institution

Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

fYear

1995

fDate

19-21 June 1995

Firstpage

134

Lastpage

135

Abstract

The relation between light emitting characteristics and the porous silicon microstructure has been analyzed by applying a new in situ electroluminescence and photoluminescence spectra measurement technique during anodic oxidation. On the basis of this result, a porous silicon structure has been modified to improve /spl nu/ (the external light emission efficiency), and a maximum /spl nu/ of 0.35%, the highest confirmed value ever reported, has been obtained.

Keywords

anodisation; electroluminescence; elemental semiconductors; photoluminescence; porous materials; silicon; 0.35 percent; EL efficiency; Si; anodic oxidation; electroluminescence spectra; external light emission efficiency; in situ spectra measurement technique; light emitting characteristics; microstructure analysis method; photoluminescence spectra; porous Si; porous silicon microstructure; Etching; Hafnium; Microstructure; Microwave integrated circuits; Nanoscale devices; Oxidation; Research and development; Silicon; Solid state circuits; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1995. Digest. 1995 53rd Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-2788-8

Type

conf

DOI

10.1109/DRC.1995.496301

Filename

496301