Demonstration of blue vertical-cavity surface-emitting laser diode

Author

Yoshii, S. ; Yokogawa, T. ; Tsujimura, A. ; Sasai, Y. ; Merz, J.L.

Author_Institution

Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

fYear

1995

fDate

19-21 June 1995

Firstpage

138

Lastpage

139

Abstract

We report on the first demonstration of an electrically-pumped blue VCSEL. Laser action was achieved at a wavelength of 484 nm under pulsed current injection at 77 K. The VCSEL structure was composed of a CdZnSe/ZnSe multi-quantum-well active layer, ZnSe cladding layers, and SiO/sub 2//TiO/sub 2/ distributed Bragg reflectors (DBRs). The CdZnSe/ZnSe epitaxial layers were grown by molecular beam epitaxy (MBE) directly on a GaAs (100) substrate at a growth temperature of 270/spl deg/C. The MQW structure consisted of Cd/sub 0.2/Zn/sub 0.8/Se quantum wells and ZnSe barriers.

Keywords

II-VI semiconductors; cadmium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; surface emitting lasers; zinc compounds; 270 C; 484 nm; 77 K; Cd/sub 0.2/Zn/sub 0.8/Se quantum wells; Cd/sub 0.2/Zn/sub 0.8/Se-ZnSe; CdZnSe/ZnSe multi-quantum-well active layer; GaAs; GaAs (100) substrate; SiO/sub 2/-TiO/sub 2/; SiO/sub 2//TiO/sub 2/ distributed Bragg reflectors; VCSEL structure; ZnSe barriers; ZnSe cladding layers; blue vertical-cavity surface-emitting laser diode; electrically-pumped blue VCSEL; growth temperature; molecular beam epitaxy; pulsed current injection; Diode lasers; Distributed Bragg reflectors; Epitaxial layers; Gallium arsenide; Molecular beam epitaxial growth; Optical pulses; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1995. Digest. 1995 53rd Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-2788-8

Type

conf

DOI

10.1109/DRC.1995.496302

Filename

496302