Effect of device impedance on the measurement of carrier lifetime and carrier density in semiconductor lasers

Author

Flynn, E.J.

Author_Institution

AT&T Bell Labs., Breinigsville, PA, USA

fYear

1995

fDate

19-21 June 1995

Firstpage

146

Lastpage

147

Abstract

Corroboration of a revised view of recombination in 1.3 /spl mu/m InGaAsP lasers is provided by quantitative measurements of the spontaneous emission imaged through substrate metallization windows. These data exhibit sensitivity to the acceptor concentration in the active layer via the dependence of spontaneous emission intensity on the junction voltage. The data demonstrate explicitly the dependence of the spontaneous emission intensity on the excess hole concentration, accurately described by the bimolecular formula, but contrary to the linear dependence inferred from the analysis of uncorrected lifetime data. This analysis constitutes a DC method for estimating the acceptor concentration in bulk-active lasers.

Keywords

III-V semiconductors; carrier density; carrier lifetime; electron-hole recombination; gallium arsenide; impurity states; indium compounds; semiconductor lasers; spontaneous emission; 1.3 micrometre; DC method; InGaAsP; acceptor concentration; bulk-active lasers; carrier density; carrier lifetime; device impedance; excess hole concentration; junction voltage; recombination; semiconductor lasers; spontaneous emission intensity; substrate metallization windows; Amplitude modulation; Charge carrier density; Charge carrier lifetime; Data analysis; Density measurement; Impedance measurement; Radiative recombination; Spontaneous emission; Voltage; Volume measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1995. Digest. 1995 53rd Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-2788-8

Type

conf

DOI

10.1109/DRC.1995.496305

Filename

496305