DocumentCode
3535606
Title
Study of interface behavior on dielectric properties of epoxy-silica nanocomposites
Author
Veena, M. ; Renukappa, N.M. ; Shivakumar, K.N. ; Seetharamu, S.
Author_Institution
Dept. of Electron. & Commun., Sri Jayachamarajendra Coll. of Eng., Mysore, India
fYear
2012
fDate
24-28 July 2012
Firstpage
1
Lastpage
4
Abstract
This paper focused on epoxy-based nanodielectric composites with 5, 10, 15 and 20 wt.% of silica constituents prepared using simple mechanical mixing technique along with required curing cycles. The experimentally clarified dielectric constant (ε´) and dissipation factor (tanδ) are influenced by addition of nanosilica is discussed on the basis of the three core interface model proposed for interaction zones. The interfacial region (interaction zone) is likely to be pivotal in controlling properties, the bonding and crosslinking between epoxy-silica was characterized using Fourier transform Infrared Spectroscopy (FTIR) and Differential Scanning Calorimetery (DSC). In addition, Positron Annihilation Lifetime Spectroscopy (PALS) is used to determine free volume of nanocomposites.
Keywords
Fourier transform spectra; differential scanning calorimetry; infrared spectra; materials preparation; mixing; nanocomposites; permittivity; positron annihilation; silicon compounds; DSC; FTIR; Fourier transform infrared spectroscopy; PALS; SiO2; core interface model; dielectric properties; differential scanning calorimetery; dissipation factor; epoxy-based nanodielectric composites; epoxy-silica nanocomposites; experimentally clarified dielectric constant; interaction zones; interface behavior; interfacial region; mechanical mixing technique; nanosilica; positron annihilation lifetime spectroscopy; Degradation; Dielectrics; Fabrication; Materials; OWL; Positrons; Silicon compounds; Dielectric constant; Fourier Transform Infrared Spectroscopy; Free volume; Glass transition temperature; tanδ;
fLanguage
English
Publisher
ieee
Conference_Titel
Properties and Applications of Dielectric Materials (ICPADM), 2012 IEEE 10th International Conference on the
Conference_Location
Bangalore
ISSN
2160-9225
Print_ISBN
978-1-4673-2852-4
Type
conf
DOI
10.1109/ICPADM.2012.6318951
Filename
6318951
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