Localised bandgap engineering in III-V semiconductor quantum well structures for optoelectronic devices

Author

Weiss, Bernard L.

Author_Institution

Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK

fYear

1995

fDate

6-10 Nov 1995

Firstpage

63

Lastpage

66

Abstract

In this paper the processing, properties and applications of interdiffusion in III-V semiconductor quantum well structures for optoelectronic device applications are reviewed. The interdiffusion process and its influence on the characteristics of a range of III-V quantum well structures are discussed. The use of this process for the post growth modification of QW structures is also discussed, including the tuning of laser characteristics. In addition, the use of the process for three dimensional structuring of devices is important for the isolation in optical integrated circuits

Keywords

III-V semiconductors; chemical interdiffusion; energy gap; integrated optoelectronics; optoelectronic devices; quantum well lasers; semiconductor quantum wells; III-V semiconductor quantum well structures; interdiffusion; isolation; lasers; localised bandgap engineering; optical integrated circuits; optoelectronic devices; three dimensional structuring; Circuit optimization; III-V semiconductor materials; Integrated optics; Laser tuning; Optical devices; Optical tuning; Optoelectronic devices; Photonic band gap; Quantum well lasers; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Print_ISBN

0-7803-2624-5

Type

conf

DOI

10.1109/TENCON.1995.496336

Filename

496336