Technology of infrared rapid thermal annealing and its application in VLSI

Author

Lin, Hui-Wang ; Liu, Rong-hua ; Chen, Bi-xian ; Luan, Eong-fa

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

1995

fDate

6-10 Nov 1995

Firstpage

285

Lastpage

286

Abstract

The technology and equipment of the infrared rapid thermal annealing for VLSI is reported. The equipment used for rapid thermal annealing has been made with an radio frequency (RF)-induced graphite heater in a quartz housing as an infrared heating source. By using this technology and equipment the fabrication of shallow junction, the formation of silicide, the effect of BPSG reflow and annihilating the micro defects and thermal donor in CZ Si single crystal are discussed

Keywords

VLSI; borosilicate glasses; incoherent light annealing; integrated circuit technology; phosphosilicate glasses; rapid thermal annealing; B2O3-P2O5-SiO2; BPSG; BPSG reflow; CZ Si single crystal; IR heating source; RF-induced graphite heater; Si; VLSI; infrared RTA; infrared rapid thermal annealing; micro defects removal; quartz housing; shallow junction formation; silicide formation; thermal donor removal; Heat treatment; Infrared heating; Ion implantation; MOSFET circuits; Microelectronics; Optical device fabrication; Radio frequency; Rapid thermal annealing; Silicides; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Print_ISBN

0-7803-2624-5

Type

conf

DOI

10.1109/TENCON.1995.496395

Filename

496395