DocumentCode
3537097
Title
Characterization of split-gate flash memory devices: reliability, gate-disturbance and capacitive coupling coefficients
Author
Kim, D.M. ; Jun, Y. ; Sohn, Y.S. ; Kim, J.W. ; Choi, I.
Author_Institution
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., South Korea
fYear
1995
fDate
6-10 Nov 1995
Firstpage
460
Lastpage
463
Abstract
The split-gate flash memory device is characterized. The oxide breakdown due to cumulative electron tunneling, viz. repeated erasure is investigated with the use of current injection experiments. The results are correlated with the observed device cycling behaviour. Also data for the gate disturbance, programming efficiency and capacitive coupling coefficients are presented and discussed
Keywords
EPROM; MOS memory circuits; integrated circuit reliability; tunnelling; capacitive coupling coefficients; current injection; cycling; electron tunneling; erasure; gate disturbance; oxide breakdown; programming efficiency; reliability; split-gate flash memory devices; Cathodes; Degradation; Electric breakdown; Electron traps; Electronics industry; Flash memory; Laboratories; Split gate flash memory cells; Stress; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN
0-7803-2624-5
Type
conf
DOI
10.1109/TENCON.1995.496439
Filename
496439
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