DocumentCode
3537273
Title
Sensors of magnetic field based on magnetoresistive effect
Author
Sadovskov, I.D. ; Zaharov, A.A.
Author_Institution
Saratov State Tech. Univ., Saratov, Russia
fYear
2012
fDate
19-20 Sept. 2012
Firstpage
402
Lastpage
408
Abstract
This article describes sensors of magnetic field based on magnetoresistive effect. Learning magnetoresistive effect is actually scientific research work now. Magnetoresistive sensors on ferromagnetic structures are divided into Anisotropic Magnetoresistor (AMR), Giant Magnetoresistor (GMR), Spin-Dependent Tunneling (SDT) Magnetoresistor. Using GMR and SDT sensors perspective to create highly sensitive and integrated measuring electronic devices.
Keywords
ferromagnetic materials; giant magnetoresistance; magnetic field measurement; magnetic sensors; magnetoresistive devices; AMR sensor; GMR sensor; SDT sensor; anisotropic magnetoresistor; ferromagnetic structures; giant magnetoresistor; integrated measuring electronic devices; magnetic field sensor; magnetoresistive effect; spin dependent tunneling; Magnetic sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Actual Problems of Electron Devices Engineering (APEDE), 2012 International Conference on
Conference_Location
Saratov
Print_ISBN
978-1-4673-2096-2
Type
conf
DOI
10.1109/APEDE.2012.6478090
Filename
6478090
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