• DocumentCode
    3537501
  • Title

    Magnetic and electric transport properties in Fe3O4 thin films and nanowires

  • Author

    Li, Hongliang ; Wu, Yihong ; Teo, Kic Leong ; Guo, Zaibing ; Wang, Shijie ; Veres, Teodor

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
  • fYear
    2005
  • fDate
    4-8 April 2005
  • Firstpage
    1457
  • Lastpage
    1458
  • Abstract
    The transport properties of both epitaxial Fe3O4 thin films and nanowires grown on α-Al2O3 (0001) substrates using molecular beam epitaxy were investigated. The latter allows one to confine the APBs or tunnel junctions in a one-dimensional nanowire, which reduces substantially the number of boundaries, or junctions. The bias-dependence of conductance and magnetoresistance suggests that the electron transport of Fe3O4 nanowires is well represented by a series of tunnel junctions.
  • Keywords
    electrical conductivity; ferromagnetic materials; iron compounds; magnetic epitaxial layers; nanowires; tunnelling magnetoresistance; Al2O3; Fe3O4; bias-dependence conductance; electric transport properties; epitaxial thin films; magnetic properties; magnetoresistance; molecular beam epitaxy; one-dimensional nanowires; tunnel junctions; Electric resistance; Equations; Iron; Magnetic films; Magnetic properties; Nanowires; Temperature dependence; Temperature distribution; Transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
  • Print_ISBN
    0-7803-9009-1
  • Type

    conf

  • DOI
    10.1109/INTMAG.2005.1464158
  • Filename
    1464158
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3537501