30 nm-scale-fabrication of magnetic tunnel junctions using electron beam assisted CVD hard masks

Author

Isogami, S. ; Tsunoda, M. ; Takahashi, M.

Author_Institution

Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan

fYear

2005

fDate

4-8 April 2005

Firstpage

1529

Lastpage

1530

Abstract

The electron beam (EB) assisted CVD carbon hard mask method, instead of focused ion beam (FIB) was demonstrated. Deposited carbon pillar could be used as a mask for Ar ion milling and also via a contact to top electrode. The carbon pillar deposition with minimum size of 30 nm width under the well optimized condition was accomplished. After CVD of carbon pillar, micro-fabrication process was applied and the magnetoresistance measurement for each magnetic tunnel junction (MTJ) was examined.

Keywords

chemical vapour deposition; electron beam deposition; nanostructured materials; nanotechnology; tunnelling magnetoresistance; 30 nm; 30 nm-scale-fabrication; Ar ion milling; C; Ta-CuO-Ta-NiFe-Cu-Mn₇₅Ir₂₅-Co₇₀Fe₃₀-AlN-Co₇₀Fe₃₀-NiFe-T a; carbon pillar; electron beam assisted CVD carbon hard masks; focused ion beam; magnetic tunnel junctions; magnetoresistance; microfabrication; top electrode; Argon; Chemical elements; Electrodes; Electron beams; Lithography; Magnetic tunneling; Milling; Pollution measurement; Sputtering; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1464196

Filename

1464196