Study of the relationship between scalability of MTJ and switching field using SPM

Author

Moses, A. Fervin ; Park, Seungbae ; Heo, Jinhee ; Kim, Tacwan ; Ilsub Chung

Author_Institution

Sch. of Inf. & Commun. Eng., Sung Kyun Kwan Univ., Suwon, South Korea

fYear

2005

fDate

4-8 April 2005

Firstpage

2015

Lastpage

2016

Abstract

The switching field variation in terms of the sizes of sub-micron MTJ cells was studied by measuring the I-V characteristics of MTJ cells and hysteresis I-H loop, obtained by measuring the tunneling current with sweeping magnetic field. The observed switching field using SPM was compared to the results obtained through conventional methods. The measured currents with respect to applied magnetic fields reveal hysteretic behavior with two stable states. It was also observed that the switching field of MTJ cell increase as the size of MTJ cell decreases due to the depolarization.

Keywords

magnetic hysteresis; magnetic switching; tunnelling magnetoresistance; I-V characteristics; MTJ; SPM; depolarization; hysteresis I-H loop; sweeping magnetic field; switching field; tunneling current; Current measurement; Electrical resistance measurement; Magnetic field measurement; Magnetic hysteresis; Magnetic switching; Magnetic tunneling; Scalability; Scanning probe microscopy; Size measurement; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1464446

Filename

1464446