Effect of Kr ion bombardment for [Fe/MgO/Fe] based magnetic tunneling junctions

Author

Miyamoto, Y. ; Machida, K. ; Aoshima, K. ; Funabashi, N. ; Kuga, K.

Author_Institution

NHK Sci. & Tech. Res. Labs., Tokyo, Japan

fYear

2005

fDate

4-8 April 2005

Firstpage

2017

Lastpage

2018

Abstract

Fe/MgO/Fe based magnetic tunneling junctions were prepared electron beam lithography and ion beam milling process. The crystal structure was analyzed using X-ray diffractometry (XRD) with Co-Kα radiation. Surface morphology was observed by atomic force microscopy (AFM). It was found that MR characteristics and barrier height is affected by the acceleration voltage of the bombarding ion source. Ion bombardment to barrier insulator with adequate energy may influence the composition of Mg-O due to small dissociation of oxygen ions and reduce the resistance-area product.

Keywords

X-ray diffraction; atomic force microscopy; crystal structure; dissociation; ion beam effects; ion beam lithography; iron; krypton; magnesium compounds; milling; surface morphology; tunnelling magnetoresistance; AFM; Co-Kα radiation; Fe-MgO-Fe; Kr; X-ray diffractometry; XRD; acceleration voltage; atomic force microscopy; barrier insulator; bombarding ion source; crystal structure; electron beam lithography; ion beam milling process; ion bombardment; magnetic tunneling junctions; oxygen ions dissociation; resistance-area product; surface morphology; Atomic force microscopy; Electron beams; Ion beams; Iron; Lithography; Magnetic analysis; Magnetic tunneling; Milling; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1464447

Filename

1464447