DocumentCode
3540217
Title
Exchange bias model in ferromagnetic/antiferromagnetic bilayer with Ll2-type ordered antiferromagnet
Author
Mitsumata, C. ; Sakuma, A. ; Fukamichi, K.
Author_Institution
Hitachi Metals Ltd., Kumagaya, Japan
fYear
2005
fDate
4-8 April 2005
Firstpage
2029
Lastpage
2030
Abstract
This paper discusses the appearance of the non-collinear spin structure in the ferromagnetic/antiferromagnetic (FM/AFM) bilayer system with the Ll2-type ordered AFM alloy. The model is within the framework of the classical Heisenberg model. The FM spin show the shifted magnetization loop under the influence of the exchange bias. The uncompensated spin element in the AFM layer shows the hysteresis loop and also indicates the biasing shift. That biasing field in the AFM layer is equivalent to the bias in the FM layer.
Keywords
Heisenberg model; antiferromagnetism; exchange interactions (electron); ferromagnetism; interface magnetism; magnetic hysteresis; magnetic structure; Ll2-type ordered antiferromagnet; biasing shift; classical Heisenberg model; exchange bias model; ferromagnetic-antiferromagnetic bilayer; hysteresis loop; noncollinear spin structure; shifted magnetization loop; Anisotropic magnetoresistance; Antiferromagnetic materials; Atomic layer deposition; Atomic measurements; Lattices; Magnetic anisotropy; Magnetization; Perpendicular magnetic anisotropy; Spectroscopy; Stacking;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN
0-7803-9009-1
Type
conf
DOI
10.1109/INTMAG.2005.1464453
Filename
1464453
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