Cross-sectional scanning tunneling microscopy of InGaAs quantum dots

Author

Harnett, C.K. ; Evoy, S. ; Craighead, H.G. ; Pond, K. ; Kim, J. ; Gossard, A.

Author_Institution

Sch. of Appl. & Eng. Phys., Cornell Univ., Ithaca, NY, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

249

Abstract

Summary form only given. Topographic cross section scanning tunnelling microscope (X-STM) images show dot sizes of approximately 20 nm, consistent with atomic force microscopy measurements on similar samples. I-V measurements on the QDs feature a lower tunneling current turn-on for the dots than the surrounding areas. Tunneling-induced luminescence images from the surrounding layers provide additional information about carrier behavior within the system.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; scanning tunnelling microscopy; semiconductor quantum dots; I-V measurements; InGaAs; InGaAs quantum dots; STM images; atomic force microscopy measurements; carrier behavior; cross-sectional scanning tunneling microscopy; dot sizes; lower tunneling current turn-on; topographic cross section scanning tunnelling microscope; tunneling-induced luminescence images; Area measurement; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Current measurement; Force measurement; Indium gallium arsenide; Luminescence; Size measurement; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676123

Filename

676123